TECH NEWS – Thanks to technology from Micron and Qualcomm, Samsung’s 2026 flagship phone could see a major leap forward.

Although Samsung has not yet unveiled the Galaxy S26 series, leaked information and rumors have revealed important details about the S26 Ultra, including its refined appearance, thinner body, lighter construction, and improved optics. According to the latest leak, the phone’s memory performance will improve, which is important for gamers and multitaskers.

Reliable leaker Ice Universe claims that the S26 Ultra will be equipped with Micron’s latest 10.7 Gbps LPDDR5X RAM, a significant improvement over the S25 Ultra’s 9.6 Gbps. This improvement is due to Micron’s new 1γ (1-gamma) DRAM architecture, which significantly increases efficiency. Compared to the previous generation based on 1β (1-beta) technology, the new architecture provides greater energy efficiency and better multitasking capabilities, resulting in smoother performance without draining the battery. While the speed increase may not be noticeable in everyday use, it makes a significant difference in demanding tasks where memory bandwidth plays a crucial role in stability and performance.

Galaxy S26 Ultra 10.7Gbps LPDDR5X

— PhoneArt (@UniverseIce) August 8, 2025

Samsung is placing increasing emphasis on expanding AI capabilities, and better RAM would play a crucial role in supporting these features and ensuring that the flagship model remains a performance powerhouse. The Galaxy S26 Ultra is expected to use the Snapdragon 8 Elite 2 chip, and together with the memory upgrade, this could be a substantial improvement over the previous model. As competitors intensify efforts to improve memory and storage performance, it is crucial for the South Korean tech giant not to fall behind but to set a new standard for Android performance next year when the lineup launches.

By combining better efficiency with faster RAM, the company can help improve battery life and peak performance.

Source: WCCFTech